white electronic designs corporation ?(602) 437-1520 ?www.whiteedc.com 2 sram monolithics 1 wms512k8-xxx 512kx8 monolithic sram, smd 5962-95613 features access times 70, 85, 100, 120ns mil-std-883 compliant devices available evolutionary, corner power/ground pinout jedec approved 32 pin ceramic dip (package 300) 32 lead ceramic soj (package 101) commercial, industrial and military temperature ranges 5 volt power supply low power cmos low power data retention ttl compatible inputs and outputs evolutionary pinout 32 dip 32 csoj (de) top view 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 a18 a16 a14 a12 a7 a6 a5 a4 a3 a2 a1 a0 i/o0 i/o1 i/o2 v ss v cc a15 a17 we a13 a8 a9 a11 oe a10 cs i/o7 i/o6 i/o5 i/o4 i/o3 a 0-18 address inputs i/o 0-7 data input/output cs chip select oe output enable we write enable v cc +5.0v power gnd ground pin description february 2000 rev. 2
2 white electronic designs corporation ?(602) 437-1520 ?www.whiteedc.com 2 sram monolithics wms512k8-xxx truth table absolute maximum ratings parameter symbol min max unit operating temperature t a -55 +125 c storage temperature t stg -65 +150 c signal voltage relative to gnd v g -0.5 vcc+0.5 v junction temperature t j 150 c supply voltage v cc -0.5 7.0 v cs oe we mode data i/o power h x x standby high z standby l l h read data out active l x l write data in active l h h out disable high z active recommended operating conditions dc characteristics (v cc = 5.0v, gnd = 0v, t a = -55 c to +125 c) parameter symbol min max unit supply voltage v cc 4.5 5.5 v input high voltage v ih 2.2 v cc + 0.3 v input low voltage v il -0.3 +0.8 v operating temp. (mil.) ta -55 +125 c parameter symbol conditions units min max input leakage current i li v cc = 5.5, v in = gnd to v cc 10 a output leakage current i lo cs = v ih , oe = v ih , v out = gnd to v cc 10 a operating supply current i cc cs = v il , oe = v ih , f = 5mhz, vcc = 5.5 50 ma standby current i sb cs = v ih , oe = v ih , f = 5mhz, vcc = 5.5 1 ma output low voltage v ol i ol = 2.1ma, v cc = 4.5 0.4 v output high voltage v oh i oh = -1.0ma, v cc = 4.5 2.4 v note: dc test conditions: v ih = v cc -0.3v, v il = 0.3v parameter symbol condition max unit input capacitance c in v in = 0v, f = 1.0mhz 12 pf output capacitance c out v out = 0v, f = 1.0mhz 12 pf this parameter is guaranteed by design but not tested. capacitance (t a = +25 c) parameter symbol conditions military units min typ max data retention supply voltage v dr cs v cc -0.2v 2.0 5.5 v data retention current i ccdr1 v cc = 3v 100 400 a data retention characteristics (t a = -55 c to +125 c) parameter symbol conditions units min max data retention supply voltage v dr cs v cc -0.2v 2.0 5.5 v low power data retention (l) i ccdr1 v cc = 2v 185 a data retention characteristics for low power ??version
white electronic designs corporation ?(602) 437-1520 ?www.whiteedc.com 2 sram monolithics 3 wms512k8-xxx ac characteristics (v cc = 5.0v, gnd = 0v, t a = -55 c to +125 c) ac characteristics (v cc = 5.0v, gnd = 0v, t a = -55 c to +125 c) parameter symbol -70 -85 -100 -120 units read cycle min max min max min max min max read cycle time t rc 70 85 100 120 ns address access time t aa 70 85 100 120 ns output hold from address change t oh 55 55ns chip select access time t acs 70 85 100 120 ns output enable to output valid t oe 35 40 50 60 ns chip select to output in low z t clz 1 10 10 10 10 ns output enable to output in low z t olz 1 55 55ns chip disable to output in high z t chz 1 25 25 35 35 ns output disable to output in high z t ohz 1 25 25 35 35 ns 1. this parameter is guaranteed by design but not tested. parameter symbol -70 -85 -100 -120 units write cycle min max min max min max min max write cycle time t wc 70 85 100 120 ns chip select to end of write t cw 60 75 80 100 ns address valid to end of write t aw 60 75 80 100 ns data valid to end of write t dw 30 30 40 40 ns write pulse width t wp 50 50 60 60 ns address setup time t as 00 0 0ns address hold time t ah 55 5 5ns output active from end of write t ow 1 55 5 5ns write enable to output in high z t whz 1 25 25 35 35 ns data hold from write time t dh 00 0 0ns 1. this parameter is guaranteed by design but not tested. i current source d.u.t. c = 50 pf eff i ol v 1.5v (bipolar supply) z current source oh notes: v z is programmable from -2v to +7v. i ol & i oh programmable from 0 to 16ma. tester impedance z 0 = 75 ? . v z is typically the midpoint of v oh and v ol . i ol & i oh are adjusted to simulate a typical resistive load circuit. ate tester includes jig capacitance. ac test circuit parameter typ unit input pulse levels v il = 0, v ih = 3.0 v input rise and fall 5 ns input and output reference level 1.5 v output timing reference level 1.5 v ac test conditions
4 white electronic designs corporation ?(602) 437-1520 ?www.whiteedc.com 2 sram monolithics wms512k8-xxx ws32k32-xhx timing waveform - read cycle write cycle - cs controlled write cycle - we controlled address data i/o write cycle 1, we controlled t aw t cw t ah t wp t dw t whz t as t ow t dh t wc data valid cs we address data i/o write cycle 2, cs controlled t aw t as t cw t ah t wp t dh t dw t wc cs we data valid address data i/o read cycle 2 (we = v ih ) t aa t acs t oe t clz t olz t ohz t rc data valid high impedance cs oe t chz address data i/o read cycle 1 (cs = oe = v il , we = v ih ) t aa t oh t rc data valid previous data valid
white electronic designs corporation ?(602) 437-1520 ?www.whiteedc.com 2 sram monolithics 5 wms512k8-xxx package 300: 32 pin, ceramic dip, single cavity side brazed 2.5 (0.100) typ 1.27 (0.050) 0.1 (0.005) 0.46 (0.018) 0.05 (0.002) 0.84 (0.033) 0.4 (0.014) 3.2 (0.125) min 15.04 (0.592) 0.3 (0.012) 0.25 (0.010) 0.05 (0.002) 15.25 (0.600) 0.25 (0.010) 42.4 (1.670) 0.4 (0.016) 4.34 (0.171) 0.79 (0.031) pin 1 identifier all linear dimensions are millimeters and parenthetically in inches all linear dimensions are millimeters and parenthetically in inches package 101: 32 lead, ceramic soj 1.27 (0.050) typ 21.1 (0.830) 0.25 (0.010) pin 1 identifier 19.1 (0.750) typ 11.3 (0.446) 0.2 (0.009) 3.96 (0.156) max 0.2 (0.008) 0.05 (0.002) 9.55 (0.376) 0.25 (0.010) 1.27 (0.050) 0.25 (0.010) 0.89 (0.035) radius typ
6 white electronic designs corporation ?(602) 437-1520 ?www.whiteedc.com 2 sram monolithics wms512k8-xxx device type speed package smd no. 512k x 8 sram monolithic 120ns 32 pin dip (c) 5962-95613 01hyx 512k x 8 sram monolithic 100ns 32 pin dip (c) 5962-95613 02hyx 512k x 8 sram monolithic 85ns 32 pin dip (c) 5962-95613 03hyx 512k x 8 sram monolithic 70ns 32 pin dip (c) 5962-95613 04hyx 512k x 8 sram monolithic 120ns 32 lead soj evol (de) 5962-95613 01htx 512k x 8 sram monolithic 100ns 32 lead soj evol (de) 5962-95613 02htx 512k x 8 sram monolithic 85ns 32 lead soj evol (de) 5962-95613 03htx 512k x 8 sram monolithic 70ns 32 lead soj evol (de) 5962-95613 04htx ordering information lead finish: blank = gold plated leads a = solder dip leads special processing: e = epitaxial layer device grade: m = military screened -55 c to +125 c i = industrial -40 c to +85 c c = commercial 0 c to +70 c package: c = 32 pin ceramic 0.600" dip (package 300) de = 32 lead ceramic soj (package 101) evolutionary access time (ns) improvement mark l = low power data retention organization, 512k x 8 sram monolithic white microelectronics w m s 512k 8 l - xxx x x x x
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